THEORETICAL REVIEW OF EMISSION OF LIGHT FROM QUANTUM WELL AS A RESULT OF ELECTRON-HOLE RECOMBINATION

Abstract

The materials I have to be used for this review work are different journals, articles, handbooks and reference books. These are available in the internet and the references. In semiconductor photonic device fabrication, an important objective is to produce as much light as possible from the device. In these devices, photons are released when electrons recombine with holes during transitioning from a high energy state to a lower one. Unfortunately, electron-hole recombination does not always result in the formation of photon. There are three basic types of recombination: the first results in the formation of a photon and is called radiative recombination and the second and the third, known as non-radiative and Auger recombination respectively, result in the heating of the device and do not produce photons. All three processes occur simultaneously in the device. This project work discusses the theoretical review of emission of light from quantum wells as a result of electron-hole recombination. Quantum wells are thin layered semiconductor structures in which we can observe and control many quantum mechanical effects. This leads to the electrons and the holes being confined in different layers of the semiconductor. In order to describe the band gap energy, the Schrödinger equation is very important. The solution of the Schrodinger equation for the electron energy, in the periodic potential created by the collection of atoms in a crystal lattice, results in splitting of the atomic energy levels and the formation of energy bands. This review work also addresses light incident on semiconductor materials with the photons interacting with the material. Depending on their energy and the recombination rate, the process can result in thermal or non-thermal equilibrium.